ARTICLES
Electroluminescence and energy transfer mediated by hyperbolic polaritons
L. Abou-Hamdan, A. Schmitt, R. Bretel, S. Rossetti, M. Tharrault, D. Mele, A. Pierret, M. Rosticher, T. Taniguchi, K. Watanabe, C. Maestre, C. Journet, V. Garnier, J. H. Edgar, E. Janzen, J-M. Berroir, G. Fève, G. Ménard, B. Plaçais, C. Voisin, J-P. Hugonin, J-J. Greffet, P. Bouchon, Y. De Wilde, E. Baudin
Nature, 639, p. 909–914 (2025)
DOI: 10.1038/s41586-025-08627-6
Boosting gas phase TiO2 photocatalysis with weak electric field strengths of V/cm.
ACS Applied Materials & Interfaces (2024)
High-field (1/f) noise in hBN-encapsulated graphene transistors.
Physical Review B, vol. 107, no 16, L161104 (2023)
DOI: 10.1103/PhysRevB.107.L161104 📄
Mesoscopic Klein-Schwinger effect in graphene.
Nature Physics (2023)
DOI: 10.1038/s41567-023-01978-9 📄
Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride.
Materials Research Express, (2022)
DOI: 10.1088/2053-1591/ac4fe1 📄
Plasmonic Properties of Gold Nanostructures on Gold Film.
M. Lequeux, D.Mele, P. Venugopalan, R. Gillibert, S. Boujday, W. Knoll, J.Dostalek and M. Lamy de la Chapelle
Plasmonics, (2020)
DOI: 10.1007/s11468-020-01185-9 📄
High-frequency limits of graphene field-effect transistors with velocity saturation.
Applied Sciences, vol. 10, no. 2, 446 (2020)
DOI: 10.3390/app10020446 📄
A corner reflector for graphene Dirac fermions as a phonon-scattering sensor.
Nature Communications, vol. 10, no 2428 (2019)
DOI: 10.1038/s41467-019-10326-6 📄
Ultra-long wavelength Dirac plasmons in graphene capacitors.
Journal of Physics: Materials, vol. 1, no 1, 01LT02 (2018)
DOI: 10.1088/2515-7639/aadd8c 📄
Featured in : Graphene plasmon devices take on quality and scale Physics World
Graphene FETs based on high resolution nanoribbons for HF low power applications.
D. Mele, S. Mehdhbi, D. Fadil, W. Wei, A. Ouerghi, H. Happy and E. Pallecchi
Electronic Materials Letters, vol. 14, no 2, p. 133-138 (2018)
DOI: 10.1007/s13391-018-0038-x 📄
Source-pull and Load-pull Characterisation of Graphene FET.
S. Fregonese, M. De Matos, D. Mele, C. Maneux, H. Happy, and T. Zimmer
IEEE Journal of the Electron Devices Society, vol. 3, no 1, p. 49-53 (2015)
PROCEEDINGS
The Thermal Effects of Substrate Removal on GaN HEMTs using Raman Thermometry.
G. Pavlidis, D. Mele, T. Cheng, F. Medjdoub and S. Graham
IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, 2016 IEEE-ITHERM, Las Vegas, NV, USA (2016)
DOI: 10.1109/ITHERM.2016.7517691 📄
High frequency characterization and compact electrical modelling of graphene field effect transistors.
P. Nakkala, A. Martin, M. Campovecchio, H. Happy, M. S. Khenissa, M. M. Belhaj, D. Mele, I. Colambo, E. Pallecchi, and D. Vignaud
Microwave Conference (EuMC), Roma, Italy (2014)
DOI: 10.1109/EuMC.2014.6986720
European Microwave Integrated Circuit Conference (EuMIC), Roma, Italy (2014)
DOI: 10.1109/EuMIC.2014.6997904 📄
Fabrication and characterization of CVD-grown graphene based Field-Effect Transistor.
W. Wei, G. Deokar, M. Belhaj, D. Mele, E. Pallecchi, E. Pichonat, D. Vignaud and H. Happy
European Microwave Conference (EuMC), Roma, Italy (2014)
DOI: 10.1109/EuMC.2014.6986446 📄
Graphene Field Effect Transistors on SiC with T-Shaped Gate: Homogeneity and RF performance.
M. Khenissa, D. Mele, M. Belhaj, I. Colambo, E. Pallecchi, D. Vignaud and H. Happy
European Microwave Integrated Circuit Conference (EuMIC), Roma, Italy (2014)
DOI: 10.1109/EuMIC.2014.6997796 📄
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.
C. Mukherjee, S. Fregonese, T. Zimmer, C. Maneux, H. Happy and D. Mele
European Solid State Device Research Conference (ESSDERC), Venice, Italy (2014)
DOI: 10.1109/ESSDERC.2014.6948821 📄
High Frequency Noise Characterisation of Graphene FET Device.
D. Mele, S. Fregonese, S. Lepilliet, E. Pichonat, G. Dambrine and H. Happy
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International, Seattle, WA, USA (2013)
INVITED TALKS
Microwave plasmon resonance in high-mobility hBN-encapsulated graphene (invited). 📄
D. Mele et al., International Conference Nano-M&D 2019, Paestum, Italy (2019)
CONFERENCES
The Electroluminescence of Graphene/hBN transistors. 📄
A. Schmitt et al., Graphene Conference series (graphene2022), Aachen, Germany (2022)
Pinch-off resistance and Schwinger effect in hBN-encapsulated GFETs. 📄
A. Schmitt et al., Communication au GDR HOWDI, Dourdan, France (2022)
A. Schmitt et al., Graphene Conference series (graphene2021), Grenoble, France (2021)
Dielectric permittivity and strength of hexagonal boron nitride. 📄
B. Plaçais et al., Graphene Conference series (graphene2021), Grenoble, France (2021)
The Electroluminscence of Graphene. (invited) 📄
E. Baudin et al., 239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS) (2021)
Microwave plasmon resonance in high-mobility hBN-encapsulated graphene. 📄
D. Mele et al., 4th Graphene and 2D heterostructure Workshop, Budapest, Hungary (2019)
Ultra-long wavelength Dirac plasmons in graphene capacitors. 📄
D. Mele et al., Bulletin of the American Physical Society, APS March Meeting 2019, Boston, MA, USA (2019)
D. Mele et al, Graphene Conference series (Graphene2019), Roma, Italy (2019)
A corner reflector for graphene Dirac fermions as a phonon-scattering sensor. 📄
D. Mele et al., 54th Rencontres de Moriond on Quantum Mesoscopic Physics, La Thuile, Italy (2019)
Graphene plasma resonance capacitor at GHz frequency. 📄
D. Mele et al., 34rd International Conference on the Physics of Semiconductors (ICPS), Montpellier, France (2018)
Hyperbolic cooling of graphene Zener-Klein transistors. 📄
E. Baudin et al., 34rd International Conference on the Physics of Semiconductors (ICPS), Montpellier, France (2018)
Probing graphene electron optics with a Dirac fermion reflector. 📄
H. Graef et al., Graphene Conference series (Graphene2018), Dresden, Germany (2018)
H. Graef et al., ImagineNano Graphene 2018 conference, Bilbao, Spain (2018)
Optimisation of the SERS signal from gold nanocylinders on gold subfilm substrate. 📄
D. Mele et al., Annual Action Conference Optical NanoSpectroscopy, Lisbon, Portugal (2017)
M. Lequeux et al., International Conference of Enhanced Spectroscopy (ICES), Munich, Germany (2017)
SERS signal optimisation from gold nanocylinders arrays on gold subfilm substrate.
D. Mele et al., Communication au GDR PMSE, Le Mans, France (2017)
Les applications électroniques du graphène. 📄
D. Mele, Pint of Science Festival, Lille, France (2016)
Improving the Thermal Performance of Etched back GaN-on-Si HEMTs.
G. Pavlidis et al., European Materials Research Society 2016 spring symposium (E-MRS), Lille, France (2016)
Temperature Related Effects of GaN‐based High‐Frequency Diodes Through Raman Studies.
D. Mele et al., Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), Charleston, SC, USA (2015)
High frequency electronic devices: impact of beyond graphene materials. (invited)
H. Happy at al., IEEE MTT-S International Microwave Symposium, IMS 2014, Tampa, FL, USA (2014)
Back-gated microwave field-effect transistors based on transferred CVD-grown graphene. 📄
W. Wei et al., Graphene Conference series (Graphene2014), Toulouse, France (2014)
Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications.
W. Wei et al., Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique (JNRDM 2014) Villeneuve d’Ascq, France (2014)
Graphene: what challenges for RF applications? (invited) 📄
H. Happy et al., Journées Franco-Maghrébines des Micro-ondes et leurs Applications (TELECOM’2013), Marrakech, Marocco (2013)
Improvement in Graphene nanoribbons process for field effet transistors. 📄
D. Mele et al., European Workshop on Heterostructure Technology, Villeneuve d’Ascq, France (2011)
POSTERS
Graphene Field-Effect Transistors Beyond Velocity Saturation. 📄
D. Mele et al., Graphene and 2DM Virtual Conference & Expo, Graphene2020, ePoster (2020)
Determination of the h-BN dielectric constant for its use in electronic transport devices.
A. Pierret et al., Graphene & Co, Bad Herrenalb, Germany (2019)
Ultra-long wavelength Dirac plasmons in graphene capacitors. 📄
D. Mele et al., 54th Rencontres de Moriond on Quantum Mesoscopic Physics, La Thuile, Italy (2019)
D. Mele et al., Communication au GDR Physique Quantique Mésoscopique, Aussois, France (2018)
D. Mele et al., Rencontres des Jeunes Physicien·ne·s, RJP 2018, Paris, France (2018)
Determination of the h-BN dielectric constant for its use in electronic transport devices.
A. Pierret et al., GDR Graphene & Co, Lavoisier discussions, Montpellier, France (2018)
Probing graphene electron optics with a Dirac fermion reflector.
H. Graef et al., 34rd International Conference on the Physics of Semiconductors (ICPS), Montpellier, France (2018)
Mapping of SERS signal of Nanostructures made by LIL. 📄
M. Lequeux et al., International Conference of Enhanced Spectroscopy (ICES), Munich, Germany (2017)
Optimisation of the SERS signal from gold nanocylinders on gold subfilm substrate. 📄
M. Lequeux et al., Communication au GDR PMSE, Le Mans, France (2017)
D. Mele et al., Annual Action Conference Optical NanoSpectroscopy, Lisbon, Portugal (2017)
M. Lequeux et al., Nano and Photonics & FemtoMat 2017, Mauterndorf / Salzburg, Austria (2017)
Using Nanoparticle Sensors to Enhance Raman and Photoluminescence Thermometry of Electronic Devices.
G. Pavlidis et al., Electronic Components and Technology Conference (ECTC), 2016 IEEE-ITHERM, Las Vegas, NV, USA (2016)
Graphene Field Effect Transistors on SiC with T-Shaped Gate: Homogeneity and RF performance. 📄
M. Khenissa et al., Graphene Conference, Graphene 2014, Toulouse, France (2014)
M. Khenissa et al., Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique (JNRDM), Villeneuve d’Ascq, France (2014)
High Frequency Epitaxial Graphene Fields Effect Transistors (GFET) on SiC. 📄
D. Mele et al., Trends in Nanotechnology International Conference, Madrid, Spain (2012)
THESIS
Développement de dispositifs à base de graphène pour des applications hautes fréquences. 📄
D. Mele
Thèse de doctorat en Micro et nanotechnologies, acoustique et télécommunications dirigée par Henri Happy, Université de Lille 1, Villeneuve d’Ascq, France (2014)